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FUJITSU MICROELECTRONICS DATA SHEET
DS05-13108-4E
Memory FRAM
CMOS
2 M Bit (128 K x 16)
MB85R2002
DESCRIPTIONS
The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R2002 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R2002 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R2002 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
FEATURES
* * * * * * * Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention LB and UB data byte control Package : 131,072 words x 16 bits : 1010 times/bit : 3.0 V to 3.6 V : -40 C to +85 C : 10 years (+55 C) : 48-pin plastic TSOP (1)
Copyright(c)2007-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.8
MB85R2002
PIN ASSIGNMENT
(TOP VIEW)
A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE CE2 GND UB LB VCC NC A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 NC GND I/O16 I/O8 I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 VCC I/O12 I/O4 I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 OE GND CE1 A0
(FPT-48P-M25)
PIN DESCRIPTION
Pin name A0 to A16 I/O1 to I/O16 CE1 CE2 WE OE LB, UB VCC GND NC Address Input Data Input/Output Chip Enable 1 Input Chip Enable 2 Input Write Enable Input Output Enable Input Data Byte Control Input Power Supply Ground No Connection Function
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DS05-13108-4E
MB85R2002
BLOCK DIAGRAM
A0 * * *
Address Latch.
to
Row Dec.
Ferro Capacitor Cell
A16 Column Dec. intCE2 S/A CE2 intCEB LB UB WE OE CE1 intCEB I/O8 * * to I/O1 * * intCE2 intOE intWE intCE2 I/O1 to I/O8 I/O9 to I/O16 I/O16 to I/O9
DS05-13108-4E
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MB85R2002
FUNCTION TRUTH TABLE
Mode CE1 CE2 WE OE LB UB I/O1 to I/O8 I/O9 to I/O16 Supply Current
H Standby Pre-charge X X X Read
X L X X H
X X H X H
X X H X L
X X X H L L H L
X X X H L H L L H L L H L L H L Dout Dout High-Z Dout Dout High-Z Din Din High-Z Din Din High-Z Dout High-Z Dout Dout High-Z Dout Din High-Z Din Din High-Z Din Operation (ICC) High-Z High-Z Standby (ISB)
L
Read (Pseudo-SRAM, OE control*1)
L
H
H
L H L
Write
H L
L
X
L H L
Write (Pseudo-SRAM, WE control*2)
L
H
H
L H
L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance : Latch address and latch data at falling edge, : Latch address and latch data at rising edge *1 : OE control of the Pseudo-SRAM means the valid address at the falling edge of OE to read. *2 : WE control of the Pseudo-SRAM means the valid address and data at the falling edge of WE to write.
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DS05-13108-4E
MB85R2002
ABSOLUTE MAXIMUM RATINGS
Parameter Supply Voltage* Input Voltage* Output Voltage* Ambient Operating Temperature Storage Temperature * : All voltages are referenced to GND = 0 V. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. Symbol VCC VIN VOUT TA Tstg Rating Min -0.5 -0.5 -0.5 -40 -40 Max +4.0 VCC + 0.5 VCC + 0.5 +85 +125 Unit V V V
o o
C C
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage* Input Voltage (high)* Input Voltage (low)* Ambient Operating Temperature Symbol VCC VIH VIL TA Value Min 3.0 VCC x 0.8 -0.5 - 40 Typ 3.3 Max 3.6 VCC + 0.5 +0.6 +85 Unit V V V
o
C
* : All voltages are referenced to GND = 0 V. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand.
DS05-13108-4E
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MB85R2002
ELECTRICAL CHARACTERISTICS
1. DC CHARACTERISTICS
(within recommended operating conditions) Value Parameter Symbol Conditions Unit Min Typ Max Input Leakage Current |ILI| VIN = 0 V to VCC 10 A Output Leakage Current |ILO| VOUT = 0 V to VCC, CE1 = VIH or OE = VIH 10 A 1 Supply Current ICC CE1 = 0.2 V, CE2 = VCC - 0.2 V, IOUT = 0 mA* 10 15 mA CE1 VCC - 0.2 V CE2 0.2 V*2 10 50 A Standby Current ISB OE VCC - 0.2 V, WE VCC - 0.2 V*2 LB VCC - 0.2 V, UB VCC - 0.2 V*2 Output Voltage (high) VOH IOH = - 2.0 mA VCC x 0.8 V Output Voltage (low) VOL IOL = 2.0 mA 0.4 V
*1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle. IOUT : output current *2 : All pins other than setting pins should be input at the CMOS level voltages such as H VCC - 0.2 V, L 0.2 V.
2. AC CHARACTERISTICS
* AC TEST CONDITIONS Supply Voltage : 3.0 V to 3.6 V Operating Temperature : -40 C to +85 C Input Voltage Amplitude : 0.3 V to 2.7 V Input Rising Time : 5 ns Input Falling Time : 5 ns Input Evaluation Level : 2.0 V / 0.8 V Output Evaluation Level : 2.0 V / 0.8 V Output Impedance : 50 pF (1) Read Operation Parameter Read Cycle time CE1 Active Time CE2 Active Time OE Active Time LB, UB Active Time Pre-charge Time Address Setup Time Address Hold Time OE Setup Time LB, UB Setup Time Output Data Hold time Output Set Time CE1 Access Time CE2 Access Time OE Access Time Output Floating Time 6 Symbol tRC tCA1 tCA2 tRP tBP tPC tAS tAH tES tBS tOH tLZ tCE1 tCE2 tOE tOHZ (within recommended operating conditions) Value Min 150 120 120 120 120 20 5 50 5 5 0 30 Max 100 100 100 20 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns DS05-13108-4E
MB85R2002
(2) Write Operation (within recommended operating conditions) Parameter Write Cycle Time CE1 Active Time CE2 Active Time LB, UB Active Time Pre-Charge Time Address Setup Time Address Hold Time LB, UB Setup Time Write Pulse Width Data Setup Time Data Hold Time Write Setup Time Symbol tWC tCA1 tCA2 tBP tPC tAS tAH tBS tWP tDS tDH tWS Value Min 150 120 120 120 20 5 50 5 120 0 50 5 Max Unit ns ns ns ns ns ns ns ns ns ns ns ns
3. Pin Capacitance
Parameter Input Capacitance Output Capacitance Symbol CIN COUT Condition VIN = VOUT = GND f = 1 MHz, TA = +25 oC Value Min Typ Max 10 10 Unit pF pF
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MB85R2002
TIMING DIAGRAMS 1. Read Cycle Timing (CE1, CE2 Control)
tRC tCA1 CE1 tPC
CE2 tBS LB, UB tAS A0 to A16 Valid tES OE tCE1, tCE2 I/O1 to I/O16 tLZ tAH
tCA2 tBP
H or L tRP tOHZ High-Z Invalid
tOH Valid Invalid
2. Read Cycle Timing (OE Control)
tCA1 CE1
CE2 tBS LB, UB tAS A0 to A16 Valid tAH
tCA2 tBP
H or L tRC
OE
tRP
tPC
tOE tLZ I/O1 to I/O16 Invalid tOH Valid
tOHZ High-Z Invalid
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DS05-13108-4E
MB85R2002
3. Write Cycle Timing (CE1, CE2 Control)
tWC CE1 tCA1 tPC
CE2 tBS LB, UB tAS A0 to A16 Valid tAH
tCA2 tBP
H or L
tWS WE
tWP
tDS tDH High-Z Data In Valid H or L
4. Write Cycle Timing (WE Control)
tCA1 CE1
CE2 tBS LB, UB tAS A0 to A16 Valid tAH
tCA2 tBP
H or L tWC tWP tPC
WE
tDS tDH High-Z Data In Valid H or L
DS05-13108-4E
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MB85R2002
POWER ON/OFF SEQUENCE
tpd tr tpu
VCC CE2 3.0 V
VIH (Min)
VCC CE2 3.0 V
VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
CE2 0.2 V
GND GND
CE1 > VCC x 0.8*
CE1 : Don't Care
CE1 > VCC x 0.8*
CE1
CE1
* : CE1 (Max) < VCC + 0.5 V Notes: * Use either of CE1 or CE2, or both for disenable control of the device. * Because turning the power on from an intermediate level may cause malfunctions, when the power is turned on, VCC is required to be started from 0 V. * If the device does not operate within the specified conditions of read cycle, write cycle, power on/off sequence, memory data can not be guaranteed. (within recommended operating conditions) Parameter CE1 LEVEL hold time for Power OFF CE1 LEVEL hold time for Power ON Power supply rising time Symbol tpd tpu tr Value Min 85 85 0.05 Typ Max 200 Unit ns ns ms
NOTES ON USE
After the IR reflow completed, it is not guaranteed to save the data written prior to the IR reflow.
ORDERING INFOMATION
Part number MB85R2002PFTN-GE1 10 Package 48-pin plastic TSOP(1) (FPT-48P-M25) DS05-13108-4E
MB85R2002
PACKAGE DIMENSIONS
48-pin plastic TSOP(1) Lead pitch Package width x package length Lead shape Sealing method Mounting height Weight 0.50 mm 12.00 x 12.40 mm Gullwing Plastic mold 1.20 mm MAX 0.37 g P-TSOP(1)48-12x12.4-0.50
(FPT-48P-M25)
Code (Reference)
48-pin plastic TSOP(1) (FPT-48P-M25)
Note 1) *1 : Resin protrusion. (Each side : +0.15 (.006) Max). Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder.
0.100.05 (Stand off) (.004.002)
LEAD No.
1
48
INDEX
0.50(.020)
0.22 -0.04
*1 12.000.10
+0.05 +.002
.009 -.002
0.10(.004)
M
(.472.004)
24
25
14.000.20(.551.008)
*2 12.400.10(.488.004)
1.130.07 (Mounting height) (.044.003) Details of "A" part "A" 0~8
+0.05 +.002
0.08(.003)
0.145 -0.03 .006 -.001
0.25(.010)
0.600.15 (.024.006)
C
2003-2009 FUJITSU MICROELECTRONICS LIMITED F48043S-c-2-3
Dimensions in mm (inches). Note: The values in parentheses are reference values
Please confirm the latest Package dimension by following URL. http://edevice.fujitsu.com/package/en-search/
DS05-13108-4E
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MB85R2002
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3329 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://www.fma.fujitsu.com/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/microelectronics/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 206 Kosmo Tower Building, 1002 Daechi-Dong, Gangnam-Gu, Seoul 135-280, Republic of Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://kr.fujitsu.com/fmk/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LTD. 151 Lorong Chuan, #05-08 New Tech Park 556741 Singapore Tel : +65-6281-0770 Fax : +65-6281-0220 http://www.fmal.fujitsu.com/ FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. Rm. 3102, Bund Center, No.222 Yan An Road (E), Shanghai 200002, China Tel : +86-21-6146-3688 Fax : +86-21-6335-1605 http://cn.fujitsu.com/fmc/ FUJITSU MICROELECTRONICS PACIFIC ASIA LTD. 10/F., World Commerce Centre, 11 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel : +852-2377-0226 Fax : +852-2376-3269 http://cn.fujitsu.com/fmc/en/
Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. Edited: Sales Promotion Department

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